综述"Surface Charge Transfer Doping of Low-Dimensional Nanostructures toward High-Performance Nanodevices"以封面论文的形式发表在 Adv. Mater. 上

2016-12-29     来源:站内    关键词:揭建胜课题组     浏览量:286
Abstract
Device applications of low-dimensional semiconductor nanostructures rely on the ability to rationally tune their electronic properties. However, the conven- tional doping method by introducing impurities into the nanostructures suf- fers from the low ef ciency, poor reliability, and damage to the host lattices. Alternatively, surface charge transfer doping (SCTD) is emerging as a simple yet ef cient technique to achieve reliable doping in a nondestructive manner, which can modulate the carrier concentration by injecting or extracting the carrier charges between the surface dopant and semiconductor due to the work-function difference. SCTD is particularly useful for low-dimensional nanostructures that possess high surface area and single-crystalline struc- ture. The high reproducibility, as well as the high spatial selectivity, makes SCTD a promising technique to construct high-performance nanodevices based on low-dimensional nanostructures. Here, recent advances of SCTD are summarized systematically and critically, focusing on its potential applica- tions in one- and two-dimensional nanostructures. Mechanisms as well as characterization techniques for the surface charge transfer are analyzed. We also highlight the progress in the construction of novel nanoelectronic and nano-optoelectronic devices via SCTD. Finally, the challenges and future research opportunities of the SCTD method are prospected.