揭建胜

教授,博士生导师,副院长

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  • 112020
    揭建胜教授受邀担任IOP旗下期刊Journal of Physics: Materials的编委


    Editorial Board


    Jiansheng Jie, Soochow University, China

    Oana Jurchescu, Wake Forest University, USA

    Sohini Kar-Narayan, University of Cambridge, UK

    Emma Kendrick, University of Birmingham, UK

    Xiang Li, Zhejiang University, China

    Zhen Li, Wuhan University, China

    Xiaoming Mao, University of Michigan, USA

    Cecilia Mattevi, Imperial College London, UK

    Aurélien Manchon, Interdisciplinary Center of Nanoscience of Marseille, France

    Yongfeng Mei, Fudan University, China


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  • 112020
    我组与香港理工大学Yuen Hong Tsang教授合作文章"Van der Waals Epitaxial Growth of Mosaic‐Like 2D Platinum Ditelluride Layers for Room‐Temperature Mid‐Infrared Photodetection up to 10.6 µm"发表在Adv. Mater.上

    Abstract


    Mid-infrared (MIR) photodetection, covering diverse molecular vibrational regions and atmospheric transmission windows, is vital to civil and military purposes. Versatile use of MIR photodetectors is commonly dominated by HgCdTe alloys, InSb, and quantum superlattices, which are limited by strict operation demands, high-cost, and environmental toxicity. Despite the rapid advances of black phosphorus (BP)-based MIR photodetectors, these are subject to poor stability and large-area integration difficulty. Here, the van der Waals (vdW) epitaxial growth of a wafer-scale 2D platinum ditelluride (PtTe2) layer is reported via a simple tellurium-vapor transformation approach. The 2D PtTe2 layer possesses a unique mosaic-like crystal structure consisting of single-crystal domains with highly preferential [001] orientation along the normal direction, reducing the influence of interface defects and ensuring efficient out-of-plane carrier transportation. This characteristic, combined with the wide absorption of PtTe2 and well-designed vertical device architecture, makes the PtTe2/Si Schottky junction photodetector capable of sensing ultrabroadband light of up to 10.6 μm with a high specific detectivity. Also, the photodetector exhibits an excellent room-temperature infrared-imaging capability. This approach provides a new design concept for high-performance, room-temperature MIR photodetection based on 2D layered materials.





  • 112020
    丁可博士、张萌同学的论文《High-resolution image patterned silicon wafer with inverted pyramid micro-structure arrays for decorative solar cells》发表在Mater. Today Energy上

    Abstract

    Silicon (Si)-based solar cells have been widely used owing to their high conversion efficiency, high stability, and low cost. With the popularity of distributed photovoltaic systems, the appearance of photovoltaic panels has become more and more critical. However, compared to other types of solar cells, such as colored dye-sensitized and perovskite solar cells, the most widely used Si-based solar cells usually show a monotonous appearance. Here, we report the realization of high-resolution image patterned Si wafers by taking advantage of the inverted pyramid microstructure arrays. The digitized grayscale image is converted to the patterns that consist of inverted pyramid micro-structure units with different reflectivities. Then the patterns are transferred onto Si wafer through the processes of photolithography and dry/wet etching, enabling the construction of any grayscale image on the Si wafer with a resolution as high as 600 dots per inch (DPI) and a maximum contrast ratio of 4.7: 1. A laser ablation method, along with a circular pixel technology, is also developed to remarkably improve the patterning efficiency. Further, in combination with an optical anti-reflection layer, colored image patterned Si wafers are achieved. Our work demonstrates the enormous potential of image patterned Si solar cells for new-generation distributed solar energy systems with decorative features.


  • 092020
    我组工作《石墨烯量子点诱导厘米级单层有机晶体液面生长》被高分子科学前沿报道

          单层有机晶体具有缺陷态密度低、无晶界的特性,使其在光电子器件领域具有重要的应用前景。同时,大尺寸、高结晶质量的单晶体有助于有机器件的可控制备,并揭示了分子排列方式与电学性能的关系,最终为构筑高性能有机光电器件提供了理论指导。因此,大尺寸、高结晶质量的单层有机晶体的可控制备及其电学性能的研究具有重要的现实意义。目前,水/空界面可作为二维有机晶体外延生长模板,实现了液相法制备单层有机晶体。然而,已报道的方法(Langmuir-Blodgett法和液相外延法)仍存在些许问题,例如存在有机溶剂扩散能力差和分子间相互作用力弱等问题,使得单层有机晶体的结晶质量或尺寸仍然不理想,并难以应用于大尺寸光电子器件中。

          基于以上科学问题,苏州大学揭建胜教授团队对高质量、大尺寸单层有机晶体的生长及其高性能场效应器件的应用做出积极有益的探索,并首次采用石墨烯量子点诱导有机分子自组装的方法实现了厘米级尺寸、高结晶质量的单层有机晶体的可控制备。该工作具有如下创新点:1.石墨烯量子点水溶液pH值有效调控,实现了有机溶剂在水面上的可控扩散;2.石墨烯量子点与有机分子间的π-π相互作用力可降低分子的形核能并促进晶体大面积连续生长;3.C10-BTBT分子为例,高结晶质量、厘米级C10-BTBT单层晶体的迁移率高达2.6 cm2 V-1 s-1,较目前已报道的方法获得的单层有机晶体的迁移率有一定的提高(Langmuir-Blodgett法<0.01 cm2 V-1 s-1,液相外延法<0.022 cm2 V-1 s-1以及刚性基底自组装法0.1-1 cm2 V-1 s-1)。研究者相信,此项研究将会为高质量、大尺寸单层有机晶体的可控生长和大规模、高性能有机场效应器件的探索应用提供新的思路。相关论文发表在Advanced Materials (DOI: 10.1002/adma.202003315),文章通讯作者为苏州大学揭建胜教授,第一作者为王金文博士。




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  • 092020
    揭建胜教授入选2020年国家百千万人才工程,并被授予”有突出贡献中青年专家“荣誉称号
  • 092020
    我组工作《抑制“咖啡环”效应实现有机半导体晶体大面积二维生长新策略》被NanoResearch报道

           二维有机半导体晶体由于其超薄特性及长程有序的分子堆积结构,被认为是实现高性能有机场效应晶体管的理想材料体系。然而,接触线附近蒸发对流引起的“咖啡环”效应严重阻碍了溶液法大面积制备二维有机晶体。为此,苏州大学揭建胜教授课题组开发了一种通过使用有机半导体和聚合物共混溶液有效抑制“咖啡环”效应,从而实现大面积二维有机晶体生长的新策略。实验及理论模拟均证明,高粘度聚合物的加入,能显著地降低蒸发对流向接触线的传质速率,确保了有机分子均匀地沉积在整个基底上,这样有利于抑制有机分子面外方向上的结晶,从而极大促进面内二维结晶。利用该方法成功地实现了由少层2,7-二癸基苯并噻吩并苯并噻吩二维分子晶体组成的晶圆级薄膜。此外,基于该二维晶体构筑的有机场效应晶体管呈现出优异的电学性能,空穴迁移率最高可达12. 6 cm2·V−1·s−1,36个器件的平均迁移率为8.2 cm2·V−1·s−1。这项工作为实现大面积超薄二维有机半导体晶体提供了新的思路。


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  • 072020
    王金文博士的论文"Graphene quantum dots-induced centimeter-sized growth of monolayer organic crystals for high-performance transistors"发表在Adv. Mater.上

    Abstract

    Monolayer organic crystals have attracted considerable attention due to their extraordinary optoelectronic properties. Solution-self-assembly on water surface is an effective approach to fabricate monolayer organic crystals. However, due to the difficulties in controlling the spreading of organic solution on water surface and weak intermolecular interaction between organic molecules, large-area growth of monolayer organic crystals remains a great challenge. Here, we report a graphene quantum dots (GQDs)-induced self-assembly method for centimeter-sized growth of monolayer organic crystals on GQDs solution surface. The spreading area of organic solution can be readily controlled by tuning the pH value of the GQDs solution. Meanwhile, π-π stacking interaction between GQDs and organic molecules can effectively reduce the nucleation energy of organic molecules and afford a cohesive force to bond the crystals, enabling large-area growth of monolayer organic crystals. Using 2,7-didecyl benzothienobenzothiopene (C10-BTBT) as an example, centimeter-sized monolayer C10-BTBT crystal with uniform molecular packing and crystal orientation is attained. Organic field-effect transistors based on the monolayer C10-BTBT crystals exhibit a high mobility up to 2.6 cm2 V-1 s-1, representing the highest mobility value for solution-assembled monolayer organic crystals. Our work provides a feasible route for large-scale fabrication of monolayer organic crystals towards high-performance organic devices.


  • 072020
    邓巍老师的论文"High-Resolution Patterning of Organic Semiconductor Single Crystal Arrays for High-Integration Organic Field-Effect Transistors"发表在Mater. Today上

    Abstract

    The pursuit of low-cost, high-performance electronic applications with solution-processible organic semiconductors drives the development of efficient methods to pattern organic semiconductor single crystals (OSSCs). However, fluid instabilities and a complex evaporation process have limited patterning of OSSCs with high resolution. Here, we present a solvent-free patterning approach, capillary force-driven molecule flow (CFDMF), to achieve highly aligned 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) single crystal patterns with sub-micron resolution and high fidelity. The position as well as pattern shape and resolution of the C8-BTBT single crystal arrays can be predetermined through photolithography. Using this method, we have demonstrated a high-integration circuit comprising over 169 organic field-effect transistors (OFETs) with a high resolution of 310 dpi. The resultant OFETs show good field-effect properties with an average mobility of 4.44 cm2 V-1 s-1. This patterning technique constitutes a major step toward the use of the high-mobility OSSCs for integrated device applications.



  • 072020
    王伟、陆蓓同学的论文"Controlled 2D growth of organic semiconductor crystals by suppressing "coffee-ring" effect"发表在Nano Res.上

    Abstract


    Owing to enhanced charge transport efficiency arising from the ultrathin nature, two-dimensional (2D) organic semiconductor single crystals (OSSCs) are emerging as a fascinating platform for high-performance organic field-effect transistors (OFETs). However, “coffee-ring” effect induced by an evaporation-induced convective flow near the contact line hinders the large-area growth of 2D OSSCs through a solution process. Here, we develop a new strategy of suppressing the “coffee-ring” effect by using an organic semiconductor: polymer blend solution. With the high-viscosity polymer in the organic solution, the evaporation-induced flow is remarkably weakened, ensuring the uniform molecule spreading for the 2D growth of the OSSCs. As an example, wafer-scale growth of crystalline film consisting of few-layered 2,7-didecylbenzothienobenzothiophene (C10-BTBT) crystals was successfully accomplished via blade coating. OFETs based on the crystalline film exhibited a maximum hole mobility up to 14.2 cm2 V-1 s-1, along with an average hole mobility as high as 9.3 cm2 V-1 s-1. Our work provides a promising strategy for the large-area growth of 2D OSSCs toward high-performance organic electronics.


  • 062020
    祝贺2020届同学顺利通过毕业论文答辩

           王金文、贾若飞、肖彦玲、尉奇、张夏丽同学顺利通过学位论文答辩,携丰硕的科研成果圆满完成学业,王金文同学将继续在本组进行博士后研究,贾若飞同学、肖彦玲同学将继续在组内读博深造。祝愿深造的同学学业有成,就业的同学工作顺利!






  • 052020
    张夏丽同学的论文"Fast deposition of an ultrathin, highly crystalline organic semiconductor film for high-performance transistors"发表在Nanoscale Horiz. 上

    Abstract

    Ultrathin organic semiconductor (OSC) crystalline films hold the promise of achieving high-performance, flexible, and transparent organic electronic devices. However, fast and high-throughput solution deposition of uniform pinhole-free ultrathin OSC crystalline films over a large area remains a challenge. Here, we demonstrate that a mixed solvent system can obviously alter the fluid flowing dynamics and significantly improve the blade-coating quality of the film, enabling us to achieve a large-area continuous and smooth bis(triethylsilylethynyl)anthradithiophene (Dif-TES-ADT) ultrathin film at a fast coating speed of ~1 mm s-1, much superior to the 30-50 μm s-1 for conventional methods. Also, the ultrathin, highly crystalline Dif-TES-ADT film-based organic thin-film transistors (OTFTs) exhibit a maximum mobility up to 5.54 cm2 V-1 s-1, which is on par with the Dif-TES-ADT single crystal-based devices and among the highest for Dif-TES-ADT film-based devices. This finding should open a new route to achieve ultrathin OSC crystalline film-based high-performance flexible and transparent electronics.


  • 042020
    我组工作《Advanced Materials:微通道助力刮涂法制备面向光电集成器件的钙钛矿单晶阵列》被Materials Views China报道

    最近,苏州大学功能纳米与软物质研究院张晓宏、揭建胜教授课题组报道了一种微沟道限域结晶的新策略,利用刮涂法实现了具有均匀形貌的大面积、高质量CH3NH3PbI3钙钛矿单晶阵列。生长过程的原位观察及相应的流体动力学模拟证明,基底表面引入的微沟道能够有效约束沟道内的流体流动,通过限定接触线的尺寸与形状,有效地稳定流体传质并减少接触线前端成核密度。在此情况下,接触线附近会均匀地成核并在微沟道内形成高质量钙钛矿单晶晶种,随后通过刮涂的连续传质,钙钛矿晶种会沿刮涂方向在沟道内定向外延生长,最终形成高度取向的钙钛矿单晶阵列。利用该策略获得的钙钛矿单晶表现出优异的光电特性,具有高载流子寿命(175 ns),以及与块体状单晶相当的超低缺陷态密度(2.0 × 109 cm-3)。此外,该方法获得的CH3NH3PbI3钙钛矿单晶填满了整个微沟道,形成了独特的嵌入式结构,使得构筑基于钙钛矿单晶的叠层器件成为可能,并且每个器件都可以实现寻址访问,因此能够实现大规模的光电探测电路。该集成器件表现出优异的光探测性能,包括高的灵敏度、较快的响应速度,高的探测率,以及大的线性动态范围。进一步,利用该集成探测电路,作者成功展示了其对目标图案的高分辨成像能力。以上结果表明,该策略简单易行且可规模化应用,为钙钛矿单晶的制备及其集成器件应用提供了一种新的思路。相关论文在线发表在Advanced Materials (DOI: 10.1002/adma.201908340)上。

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  • 032020
    招贤纳士 | 总薪酬超100万!苏州大学2020年统招博士后招收公告

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  • 032020
    我组工作《Nanoscale Horizons: 界面在决定有机场效应晶体管(OFET)理想性方面的重要作用》被Lab Motif报道
  • 032020
    邓巍老师的论文"A Microchannel‐Confined Crystallization Strategy Enables Blade Coating of Perovskite Single Crystal Arrays for Device Integration"发表在Adv. Mater.上

    Abstract

    Perovskite single crystals (PSCs) possess superior optoelectronic properties compared to their corresponding polycrystalline films, but their applications of PSCs in high‐performance, integrated devices are hindered by their heavy thickness and difficulty in scalable deposition. Here, a microchannel‐confined crystallization (MCC) strategy to grow uniform and large‐area PSC arrays for integrated device applications is reported. Benefiting from the confinement effect of the microchannels, solution flow dynamics is well controlled, and thus uniform deposition of PSC arrays with suitable thickness is achieved, meaning they are applicable for scale‐up device applications. The resulting PSCs possess excellent optoelectronic properties in terms of a long carrier lifetime (175 ns) and an ultralow defect density (2 × 109 cm-3), which are comparable to the corresponding bulk crystals. The unique embedded structure of PSCs within the microchannels allows the construction of a high‐integration image sensor. This work paves the way toward high‐throughput growth of PSCs for integrated optoelectronic devices.

  • 022019
    邵智斌老师、姜天昊同学的论文"Memory phototransistors based on exponentialassociation photoelectric conversion law"发表在Nat. Commun.上

    Abstract

    Ultraweak light detectors have wide-ranging important applications such as astronomical observation, remote sensing, laser ranging, and night vision. Current commercial ultraweak light detectors are commonly based on a photomultiplier tube or an avalanche photodiode, and they are incompatible with microelectronic devices for digital imaging applications, because of their high operating voltage and bulky size. Herein, we develop a memory phototransistor for ultraweak light detection, by exploiting the charge-storage accumulative effect in CdS nanoribbon. The memory phototransistors break the power law of traditional photodetectors and follow a time-dependent exponential-association photoelectric conversion law. Significantly, the memory phototransistors exhibit ultrahigh responsivity of 3.8 × 109AW−1 and detectivity of 7.7 × 1022 Jones. As a result, the memory phototransistors are able to detect ultraweak light of 6 nW cm−2 with an extremely high sensitivity of 4 × 107. The proposed memory phototransistors offer a design concept for ultraweak light sensing devices.